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FEI Altura 855 Dual beam FIB SEM for Sale


SDI fabsurplus.com is pleased to announce the availability of the following listed used FEI Altura 855 Dual beam FIB SEM.
Please click on the "Get Quote" button at the end of the Altura 855 description, if you'd like to get a quotation, photos and specifications of this Dual beam FIB SEM, and your request for this equipment will be forwarded to our SDI sales representatives automatically.
This FEI Altura 855 Dual beam FIB SEM is available for immediate sale.
Crating, refurbishment and delivery for this equipment can be quoted on request.


FEI Altura 855 Equipment Details

SDI ID: 113295
Manufacturer: FEI
Model: Altura 855
Description: Dual beam FIB SEM
Version: 200 mm
Vintage: Inquire
Quantity: 1
Sales Condition: as is where is
Lead Time: immediately
Sales Price: Inquire
Comments:

FEI ALtura 855 Dual-Beam FIB-Sem
The equipment has just been professionally de-installed, and is now packed up, ready for international shipping.
General Overview
FIB is a precision machining technique which allows precise microscopic etching, sputtering, drilling and deposition of various materials at predefined points on the wafer. It uses a beam of accelerated Gallium ions which either strike the wafer surface and sputter it at a given point or else ionize some added gaseous precursor to allow the specific material's local deposition. The type of the chosen action -sputtering, drilling, or deposition- is defined by the beam accelerating voltage. The place where the work is carried out in turn, is defined by controlling the beam diameter.

Measurement Capabilities:
-Cross Sections and their Images preparation
-Ultra High Resolution milling & imaging
-TEM samples preparation
-Energy-dispersive X-ray spectroscopy - an analytical technique used for element analysis or chemical characterization of a sample
-CAD navigation
Deposition of metals precisely on predetermined place directly from CAD
Deposition of dielectrics precisely on predetermined place directly from CAD ds
Etching of metals precisely on predetermined place directly from CAD
Etching of dielectrics precisely on predetermined place directly from CAD
Repairing of electrical shorts in microstructures and repairing defects on masks
Localized checking of electrical connections
Finding and characterization of defects in technological processes
Can loading a substrate up to 200 mm diameter with a thicknesses of up to 5 mm

Typical beam diameter for lithography defects repairing: 20 nm
Current : 5 pA
Beam energies: 5 keV – 30 keV
Beam current stability-: < 3%/h
X and Y stage translation: ±100 nm from the stage center
Stage moving accuracy: ±0.5 μ over 125 mm stage
Measurement system: Differential laser interferometer with 4.9 nm resolution
Navigation along substrate: Using imaging secondary electron or secondary ion images

Sample holder, 6"
Piece holder load lock entry, 8"
Electron source: Schottky FEG
Beam current: 22 nA
Ion column: Sidewinder
Imaging resolution: 3 nm at 1 kV
Ion beam resolution: 5-7 nm
TLD UHR, SRH, and BSE Detectors for SEM
CDEM Detector for ion
(2) Gas chemistry
FEI Navigator
Chiller
Transformer

Stages:
X, Y-Axis: 205 x 205 mm
45 mm ZRT
Rotation: 360°
-5° to 65° ZRT

5-Axis stage motor
Turbo pump with XDS 10
Operating system: Windows.


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The data provided herein is not an offer capable of acceptance.
The information contained on this page is, to our knowledge and information, accurate, but it may contain errors and therefore we do not warrant the completeness or accuracy of the information contained on this page.
Any offer by you to purchase the equipment described on this page shall be subject to our standard terms and conditions of sale.

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