Hitachi S-7840 High Resolution Imaging and CD-SEM for Sale

FEATURES
High resolution imaging and high angle tilt of wafer samples.
A new high performance objective lens, combined with a newly designed stable Schottky emission electron source, allows for high imaging resolution of up to 4 nm and a high wafer tilt angle of up to 60 degrees. Its double-detector system, consisting of a through-the-lens E x B filter system and a standard detector below the lens, collects almost all signals generated from the sample at all tilting conditions. The S-784O is equipped with a precise and stability-enhanced multi-axis sample stage. This enables a panoramic viewing of wafers at optimum tilt angles and orientations, thereby allowing minimum working distances for the best quality images. User-friendly access to all stage parameters is provided through a new intuitive "Panoramic Stage Controller" win­dow.

Defect review
The S-784O can be directly linked with all major defect inspection and/or data manage­ment systems via networking. New software functions offer improved precision for particle and defect locations, and its clearly structured and intuitive Graphical User Interface allows a fast and convenient review and classification of defects and particles. Images may be saved on the internal hard disc of the S-784O and can be uploaded together with the classification data through the network. Automatic Defect Review and Defect Classification is available as an option.

Microanalysis using EDX spectroscopy (Optional).
Elemental microanalysis of interesting particles can be precisely performed by EDX spectroscopy on the S-784O. The high take-off angle of 45 degrees, the maximum beam energy of 15 keV and the high probe current available from the Schottky emission electron source offer ultimate analysis capability for light as well as heavy elements. Convenient operation of the EDX system is possible from the standard SEM operating console.

High precision CD-measurement
The precisely controlled electron beam system including the Schottky emission electron source of the S-784O gives the ability of high precision and fully automated (pro­grammed) CD measurements. The S-784O uses the same pattern recognition and mea­surement algorithms as the Hitachi S-8OOO and S-9OOO series that are worldwide stan­dards for Critical Dimension Metrology. These include hole measurements using polar coordinates width and width roughness measurements and various optional functions. This makes the S-784O the most ideal tool for engineering and process evaluation work.

Expandable system design
From chip cross sections to wafers and masks, the S-7840 is compatible with various sample requirements. It also allows interfacing with various systems throu"gh network­ ing.
        1) The S-7840 images and measurement data files can be transferred to outside PCs through the network. (Option: Terminal PC)
        2) By using Data Stations, it is possible to a) create recipes off-line, b) manage files remotely, c) monitor the instrument real-time, d) transfer images and measurement data for central management automatically. (Option: Data Station)
        3) The S-7840 can be interfaced with various data management systems for a total data management. (ex. Hitachi Ml-7000 Yield Enhancement System)
        4) Optional C to C Mask loading.

SPECIFICATIONS
Secondary electron image resolution: 4 nm (Tilt angle=0, Vacc.= I kV)
Magnification: x 100 - 200,000
Accelerating voltage: 0.7 - 15 kV
Optical microscope: x110 (magnification) Measurement repeatability 5 nm (3 sigma)
or less than I% (whichever is larger)
Wafer size: 200 mm dia. or 150 mm dia.
Sample stage: 5-axis CPU control
X,Y: 0 - 200 mm
Tilt 0 - 60°
Rotation: 0 - 360°
Stage positioning accuracy: ±5 µm
Wafer exchange:
Cassette to cassette autoloader system
Computer:
Engineering Work Station (20 inch CRT)
External memory: 3.5 inch FD, 3.5 inch MO
Networking with wafer inspection systems:(Option)
Elemental microanalysis: Energy dispersive X-ray spectrometer (Option)

Installation
Room temperature 20 - 25°C (fit =2°C or smaller)
Power: Single phase AC I 00, I I 5, 200, 220, 240 V ± I 0%, 7 kVA (50/60 Hz)
Gas/air source: Dry N/dry air (for vent) 400 - 880 kPa
Air (for pneumatic valve control): 600 - 880 kPa Vacuum (for operation of C to C) 13 - 40 kPa

Dimensions & weight
Column: 126 (W) x 160 (D) x 190 (H) cm 2,000 kg
SEM control unit: 60 (W) x I 29 (D) x 186 (H) cm 340 kg
Power supply: 54 (W) x 87(0) x 180 (H) cm 380 kg
HV Unit: 40 (W) x 76 (D) x 78 (H) cm 80 kg
Rotary pump 36 (W) x 65 (D) x 52 (H) cm 57 kg x 2 sets (Option)

Optional accessories
Photo,CRT unit
SECS communication interface Interface for wafer inspection systems
Wafer holders 200 mm dia., 150 mm dia.
Cross-section holders
(95, 90, 75, 60, 0, degrees),
Custom holder is available.
C to C Mask loader,
Image filing system
Terminal PC, Data Processing Software, Automatic Defect Review,
Automatic Defect Classification