Please find below a list of Used Wafer fab Epitaxial Deposition Equipment for sale by fabsurplus.com - Click on any listed item of FAB Epi Deposition Equipment to see further data.In semiconductor wafer processing, epitaxy plays a key role. Epitaxial growth, or epitaxy (EPI), is the process of depositing a fine layer of single-crystal material on top of a single crystal substrate using chemical vapor deposition (CVD). Epitaxy is done to boost and develop the performance of bipolar devices. It also helps to better control the doping concentration of the devices, making the layers oxygen and carbon-free. For the films deposited made from the same material as the substrate, the process is called homoepitaxy. These days, compound semiconductor materials are also deposited onto silicon subscrates.
| SDI ID | Manufacturer | Model | Description | Version | Vintage | Q. ty | Sales Conditions | Lead Time | |
|---|---|---|---|---|---|---|---|---|---|
| 113394 | Aixtron | G10+ | Epitaxy | 150 mm | 1 | as is where is | |||
| 108557 | Applied Materials | Centura EPI | Epitaxial Deposition, reduced pressure, 2 chamber | 300 mm | 01.05.2002 | 1 | as is where is | immediately | |
| 110712 | Applied Materials | Centura 5200 HTF Epitaxial | 3 Chamber Atmospheric Epitaxial Deposition system | 200 MM | 01.06.1996 | 1 | as is where is | immediately | |
| 110713 | Applied Materials | Centura 5200 HTF Epitaxial | 3 Chamber Atmospheric Epitaxial Deposition system | 200 MM | 01.06.1999 | 1 | as is where is | immediately | |
| 112080 | Applied Materials | Centura | CVD EPI + SiCoNi | 300 mm | 01.06.2011 | 1 | as is where is | ||
| 112081 | Applied Materials | Centura | CVD RP EPI + SiCoNi | 300 mm | 01.06.2010 | 1 | as is where is | ||
| 112604 | Applied Materials | Centura EPi SiCoNi Reduced Pressure | Reduced Pressure 2 x EPI deposition with1 x SiCoNi chamber | 300 mm | 01.06.2010 | 2 | as is where is | immediately | |
| 112127 | ASM | Epsilon 3200 | EPITAXIAL PROCESS | 300 mm | 01.06.2009 | 1 | as is where is | ||
| 112602 | ASM | Epsilon 3000 | EPITAXIAL PROCESS | 300 mm | 01.06.2003 | 2 | as is where is | ||
| 113439 | ASM | Epsilon 2000 One | Epitaxial Deposition | 150 mm | 01.06.2002 | 1 | as is where is | ||
| 113440 | ASM | Epsilon 2000 One | Epitaxial Deposition | 150 mm | 01.06.1997 | 1 | as is where is | ||
| 113441 | ASM | Epsilon 2000 One | Epitaxial Deposition | 150 mm | 01.06.1999 | 1 | as is where is | ||
| 113442 | ASM | Epsilon 2000 One | Epitaxial Deposition | 150 mm | 01.06.2000 | 1 | as is where is | ||
| 113443 | ASM | Epsilon 2000 One | Epitaxial Deposition | 150 mm | 01.06.2006 | 1 | as is where is | ||
| 113444 | ASM | Epsilon 2000 One | Epitaxial Deposition | 150 mm | 01.06.2007 | 1 | as is where is | ||
| 113445 | ASM | Epsilon 2000 One | Epitaxial Deposition | 150 mm | 01.06.2005 | 1 | as is where is | ||
| 106868 | Riber ® | MBE 32 | Molecular Beam Epitaxy system for R and D | Laboratory | 01.03.1999 | 1 | as is where is | immediately |