Oxford Instruments OpAL Laboratory ALD tool used for Al2O3 deposition for Sale

-installed and operational
-COMPLETE, NOT MISSING ANY PARTS, AND WILL BE SOLD WITH ALL ACCESSORIES
The Oxford OpAL is a plasma or thermal assisted atomic layer deposition (ALD) tool used to deposit Al2O3
Complementing the company's load-locked FlexAL ALD process tool, the OpAL offers a compact open-loading system based on OIPT’s Plasmalab80Plus process tool platform. Capable of handling the processing of full 200 mm (8-inch) wafers down to small wafer pieces, the OpAL is designed for both academic and industry R&D. The base thermal ALD system can be upgraded with a remote plasma ALD source, which allows for the widest possible choice of precursor chemistry with enhanced film quality; plasma enables low-temperature ALD processes while the remote source maintains low damage. Liquid or solid precursors can be heated to 200°C and bubbled with argon, and are housed inside an extracted stainless steel cabinet providing safe management of hazardous precursors, located within the tool to minimise delivery line length.
Capabilities
Highly conformal and uniform metal-oxide thin films with no pinholes
Slow growth rate with monolayer-level thickness control.
Single open-loop vacuum chamber with heated table and heated sidewalls
Heated table can run 80-300ºC
Two metal-organic bubbler channels with jacket heaters and millisecond-firing ALD valves. (One channel dedicated to Al2O3.)
- Typical layer thicknesses are between 1-50 nm
- (Extreme) high surface topologies
The deposition of ultrathin layers with (plasma-assisted) atomic layer depostion (ALD) techniques: Materials, such as Al2O3, TiO2, HfO2, Ta2O5, Er2O3.
Input of samples without loadlock.
Optional monitoring available with in-situ spectroscopic ellipsometry, mass spectroscopy and optical emission spectroscopy during process.
Downstream 300 W RF plasma head with isolation valve
Software to run loops of dose/purge cycles to enable ALD

Tools Specific data:-
Software Version PC2000 2.50.124.0